DatasheetsPDF.com

MTB06N03H8

Cystech Electonics
Part Number MTB06N03H8
Manufacturer Cystech Electonics
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. N-Channel Logic Level Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C710H8 Is...
Datasheet PDF File MTB06N03H8 PDF File

MTB06N03H8
MTB06N03H8


Overview
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET www.
DataSheet4U.
com Spec.
No.
: C710H8 Issued Date : 2009.
05.
07 Revised Date : Page No.
: 1/6 MTB06N03H8 Description BVDSS ID RDSON(max) 30V 75A 6.
5mΩ The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTB06N03H8 Outline Power pak Pin 1 G:Gate D:Drain S:Source MTB06N03H8 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C) Parameter Symbol www.
DataSheet4U.
com Spec.
No.
: C710H8 Issued Date : 2009.
05.
07 Revised Date : Page No.
: 2/6 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.
1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH TC=25℃ Total Power Dissipation TC=100℃ Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg 30 ±20 75 45 160 *1 53 140 40 *2 60 32 -55~+175 V A mJ W °C 100% UIS testing in condition of VD=15V, L=0.
1mH, VG=10V, IL=40A, Rated VDS=25V N-CH Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.
5 50 *3 Unit °C/W °C/W Note : 1.
Pulse width limited by maximum junction temperature 2.
Duty cycle≤1% 3.
Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON) Dynamic Ciss Coss Crss MTB06N03H8 Min.
30 1.
0 75 - Typ.
1.
5 25 5.
5 8.
8 3292 501 355 Max.
3.
0 ±100 1 25 6.
5 11 - Unit ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)