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MTB06N03J3

Cystech Electonics
Part Number MTB06N03J3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C441J3 Issued Date : ...
Datasheet PDF File MTB06N03J3 PDF File

MTB06N03J3
MTB06N03J3

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET www.
DataSheet4U.
com Spec.
No.
: C441J3 Issued Date : 2009.
03.
02 Revised Date : Page No.
: 1/7 MTB06N03J3 Features BVDSS ID RDS(ON) 30V 80A 6mΩ • 100% UIS testing, @VD=15V, L=0.
1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol MTB06N03J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.
1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy@ L=0.
05mH (Note 2) Total Power Dissipation @ TC=25℃ Total Power Dissipation @ TC=100℃ Operating Junction and Storage Temperature Range Note : 1.
Pulse width limited by maximum junction temperature 2.
Duty cycle ≤ 1% MTB06N03J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 30 ±20 80 50 170 53 140 40 83 45 -55~+175 V A mJ W °C CYStek Product Specification CYStech Electronics Corp.
Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a www.
DataSheet4U.
com Spec.
No.
: C441J3 Issued Date : 2009.
03.
02 Revised Date : Page No.
: 2/7 Value 1.
8 75 Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *ID(ON) *RDS(ON) *GFS Dynamic *Qg(VGS=10V) *Qg(VGS=5V) *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr Min.
30 1 80 Typ.
1.
5 5.
3 7.
6 25 53 30 8 17 22 16 65 10 4753 495 348 1.
2 32 12 Max.
3 ±100 1 25 6 9.
5 80 170 1.
3 Unit V V nA μA A mΩ S Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VGS=±20, VDS=0V VDS =24V, VGS =0V VDS =20V, VGS =0V, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=30A VGS =5V, ID=24A ...


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