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11N80C3

Infineon
Part Number 11N80C3
Manufacturer Infineon
Description Power Transistor
Published Feb 11, 2014
Detailed Description SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate ch...
Datasheet PDF File 11N80C3 PDF File

11N80C3
11N80C3

Overview
SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID 800 0.
45 11 V Ω A PG-TO220-3-31 PG-TO220 • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N80C3 SPA11N80C3 Package PG-TO220 Ordering Code Q67040-S4438 Marking 11N80C3 11N80C3 PG-TO220-3-31 SP000216320 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP ID 11 7.
1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Page 1 Value SPA Unit A 111) 7.
11) 33 470 0.
2 11 ±20 ±30 41 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.
2A, VDD=50V 33 470 0.
2 11 ±20 ±30 156 Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55.
.
.
+150 Rev.
2.
4 2005-08-24 Free Datasheet http://www.
datasheet4u.
net/ SPP11N80C3 SPA11N80C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 640 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesoldering 1.
6 mm (0.
063 in.
) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.
25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=680µA, VGS =VDS VDS=800V, V GS=0V, Tj=25°C Tj=150°C Symbol min.
RthJC RthJC_FP RthJA RthJA_FP Tsold - Values typ.
max.
0.
8 3.
7 62 80 260 Uni...


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