DatasheetsPDF.com

4N120

UTC
Part Number 4N120
Manufacturer UTC
Description N-CHANNEL MOSFET
Published Apr 21, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 4N120 4.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N120 provide excellent RD...
Datasheet PDF File 4N120 PDF File

4N120
4N120

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 4N120 4.
0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
 FEATURES0 * RDS(ON) ≤ 4.
0 Ω @ VGS=10V, ID=2.
0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N120L-TA3-T 4N120G-TA3-T 4N120L-TF1-T 4N120G-TF1-T 4N120L-TF2-T 4N120G-TF2-T 4N120L-TF3-T 4N120G-TF3-T 4N120L-TQ2-T 4N120G-TQ2-T 4N120L-TQ2-R 4N120G-TQ2-R 4N120L-T47-T 4N120G-T47-T 4N120L-T3F-T 4N120G-T3F-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-263 TO-263 TO-247 TO-3PF Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube www.
unisonic.
com.
tw Copyright © 2022 Unisonic Technologies Co.
, Ltd 1 of 9 QW-R205-531.
F 4N120  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 9 QW-R205-531.
F 4N120 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 4 A Pulsed (Note 2) IDM 8 A Avalanche Energy Single Pulsed (Note 3) EAS 845 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.
2 V/ns TO-220/TO-263 140 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD TO-247 40 W 155 W TO-3PF 42 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive R...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)