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TIM1414-2L

Toshiba
Part Number TIM1414-2L
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 19, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 7.5dB at 14...
Datasheet PDF File TIM1414-2L PDF File

TIM1414-2L
TIM1414-2L

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.
5dBm at 14.
0GHz to 14.
5GHz ･HIGH GAIN G1dB= 7.
5dB at 14.
0GHz to 14.
5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-2L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 9V IDSset= 1.
0A f= 14.
0 to 14.
5GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 22.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) ...


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