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BDV65A

INCHANGE
Part Number BDV65A
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 7, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Volta...
Datasheet PDF File BDV65A PDF File

BDV65A
BDV65A

Overview
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.
0V(Max.
)@ IC= 5A ·Complement to Type BDV64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV65 60 VCBO Collector-Base Voltage BDV65A 80 V BDV65B 100 BDV65C 120 BDV65 60 VCEO Collector-Emitter Voltage BDV65A 80 V BDV65B 100 BDV65C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.
5 A 125 W 3.
5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BDV65/A/B/C isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademar...


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