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BUW133

Part Number	BUW133
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor BUW133 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCE...
Datasheet	BUW133 PDF File

Overview

isc Silicon NPN Power Transistor BUW133 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCES Collector- Emitter Voltage (VBE= 0) 850 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current 10 IBM Base Current-Peak 15 PC Collector Power Dissipation @TC=25℃ 135 Tj Junction Temperature 150 UNIT V V V A A A A W ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
93 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW133 ELECTRICAL CHARACTERISTICS TC=...

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