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BUW17

Part Number	BUW17
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Speed...
Datasheet	BUW17 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.
) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 3 A 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃...

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