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BUW41

INCHANGE
Part Number BUW41
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW41 = 3...
Datasheet PDF File BUW41 PDF File

BUW41
BUW41

Overview
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW41 450 VCEV Collector-Emitter Voltage VBE= -1.
5V BUW41A 550 V BUW41B 650 BUW41 300 VCEO(SUS) Collector-Emitter Voltage BUW41A 350 V BUW41B 400 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ BUW41/A/B isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUW41/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW41 BUW41A IC= 50mA ; IB= 0 BUW41B V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A IC= 5A; IB= 1A,TC= 150℃ VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICEV Collector Cutoff Current BUW41 BUW41A BUW41B VCE= 450V;VBE= -1.
5V VCE= 450V;VBE= -1.
5V,TC= 150℃ VCE= 550V;VBE= -1.
5V VCE= 550V;VBE= -1.
5V,TC= 150℃ VCE= 650V;VBE= -1.
5V VCE= 650V;VBE= -1.
5V,TC= 150℃ IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 5A ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 0.
5A ;VCE= 10V MIN TYP.
MAX UNIT 300 350 V 400 6 V 1.
0 2.
0 V 1.
6 V 0.
1 1.
0 0.
1 1.
0 mA 0.
1 1.
0 1.
0 mA 10 40 15 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our ...


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