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BUW131

INCHANGE
Part Number BUW131
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= ...
Datasheet PDF File BUW131 PDF File

BUW131
BUW131

Overview
isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW131 500V (Min)-BUW131A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT BUW131 850 VCES Collector- Emitter Voltage(VBE= 0) V BUW131A 1000 BUW131 450 VCEO Collector-Emitter Voltage V BUW131A 500 VEBO IC ICM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 6 V 8 A 16 A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
0 ℃/W BUW131/A · isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHAR...


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