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BUW13

Part Number	BUW13
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 24, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robu...
Datasheet	BUW13 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 6 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 9 A 175 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
7 ℃/W BUW13 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(...

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