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SPW11N60S5

INCHANGE
Part Number SPW11N60S5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resist...
Datasheet PDF File SPW11N60S5 PDF File

SPW11N60S5
SPW11N60S5

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 22 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ELECTRICAL CHARACTERISTICS TC=25℃ unless other...


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