DatasheetsPDF.com

SPW11N60C2

Infineon Technologies
Part Number SPW11N60C2
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Sep 21, 2005
Detailed Description Final data SPW11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate ...
Datasheet PDF File SPW11N60C2 PDF File

SPW11N60C2
SPW11N60C2


Overview
Final data SPW11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS RDS(on) ID 600 0.
38 11 P-TO247 V Ω A Type SPW11N60C2 Package P-TO247 Ordering Code Q67040-S4313 Marking 11N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 11 7 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.
5A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 22 340 0.
6 11 6 ±20 125 -55.
.
.
+150 A V/ns V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =11A, VDS < VDD, di/dt=100A/µs, Tjmax =150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)