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SPW11N60S5

Infineon Technologies
Part Number SPW11N60S5
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Sep 21, 2005
Detailed Description SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Peri...
Datasheet PDF File SPW11N60S5 PDF File

SPW11N60S5
SPW11N60S5

Overview
SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.
38 11 P-TO247 V Ω A Type SPW11N60S5 Package P-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 11 7 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.
5 A, VDD = 50 V I D puls EAS 22 340 0.
6 11 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 125 -55.
.
.
+150 Operating and storage temperature Rev.
2.
1 Page 1 2004-03-30 SPW11N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS ...


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