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SPW11N60C3

Infineon Technologies
Part Number SPW11N60C3
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Sep 21, 2005
Detailed Description Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionar...
Datasheet PDF File SPW11N60C3 PDF File

SPW11N60C3
SPW11N60C3

Overview
Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.
38 11 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance V Ω A Type SPW11N60C3 Package P-TO247 Ordering Code Q67040-S4418 Marking 11N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.
5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=11A, VDS=480V, T j=125°C Symbol ID Value 11 7 Unit A I D puls EAS 33 340 0.
6 11 6 ±20 ±30 125 -55.
.
.
+150 W °C 2003-09-17 A V/ns V mJ Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Page 1 VGS VGS Ptot T j , T stg Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 11 A, Tj = 125 °C SPW11N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.
6 mm (0.
063 in.
) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.
25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=11A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=500µΑ, VGS=VDS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min.
RthJC RthJA Tsold - Values typ.
max.
1 62 260 Unit K/W °C Values typ.
700 3 0.
34 0.
92 0.
86 max.
3.
9 600 2.
1 - Unit V µA 25 250 100 0.
38 nA Ω Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=7A, Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open ...


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