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2SK3591

INCHANGE
Part Number 2SK3591
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 41mΩ@10V ·Fast Switching Speed ·100% ...
Datasheet PDF File 2SK3591 PDF File

2SK3591
2SK3591

Overview
isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 41mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 40 IDM Drain Current-Single Pulsed 160 PD Total Dissipation @TC=25℃ 70 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
79 UNIT ℃/W 2SK3591 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK3591 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250μA 150 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250μA 3 V 5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=20A 41 mΩ IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V VDS=150V; VGS= 0V IDSS Drain-Source Leakage Current VDS=120V; VGS= 0V;Tj=150℃ VSD Diode forward voltage IF=40A, VGS = 0 V ±100 nA 25 μA 250 1.
65 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
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