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BUZ30AH

Part Number	BUZ30AH
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor BUZ30AH，IBUZ30AH ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤130mΩ ·Enhance...
Datasheet	BUZ30AH PDF File

Overview

isc N-Channel MOSFET Transistor BUZ30AH，IBUZ30AH ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤130mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current,high speed switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 84 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Ch...

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