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IXTH75N15

IXYS
Part Number IXTH75N15
Manufacturer IXYS
Description High Current Power MOSFET
Published Jun 8, 2015
Detailed Description High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ ...
Datasheet PDF File IXTH75N15 PDF File

IXTH75N15
IXTH75N15

Overview
High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque TO-247 AD TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V 75 A 300 A 75 A 60 mJ 1.
5 J 5 V/ns 330 -55 .
.
.
+150 150 -55 .
.
.
+150 W °C °C °C 300 °C 1.
13/10 Nm/lb.
in.
6g 4g TO-247 AD (IXTH) TO-268 (IXTT) (TAB) G G = Gate S = Source S D = Drain TAB = Drain (TAB) Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Condition...


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