DatasheetsPDF.com

2N7000G

STMicroelectronics
Part Number 2N7000G
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Mar 22, 2021
Detailed Description 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max I...
Datasheet PDF File 2N7000G PDF File

2N7000G
2N7000G

Overview
2N7000 2N7002 N-channel 60 V, 1.
8 Ω, 0.
35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 ) 2N7002 60 V 60 V < 5 Ω(@10V) 0.
35 A < 5 Ω(@10V) 0.
20 A t(s ■ Low Qg uc ■ Low threshold drive rod Application te P ■ Switching applications ole Description bs This Power MOSFET is the second generation of O STMicroelectronics unique “single feature size” - strip-based process.
The resulting transistor ) shows extremely high packing density for low ont(s resistance, rugged avalanche characteristics and c less critical alignment steps therefore a u remarkable manufacturing reproducibility.
3 2 1 SOT23-3L TO-92 Figure 1.
Internal schematic diagram Obsolete Prod SOT23-3L TO-92 Table 1.
Device summary Order codes 2N7000 2N7002 Marking 2N7000G ST2N Package TO-92 SOT23-3L Packaging Bulk Tape and reel November 2008 Rev 9 1/14 www.
st.
com 14 Contents Contents 2N7000, 2N7002 1 Electrical ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3 2 Electrical characteristics .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4 2.
1 Electrical characteristics (curves) .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
6 3 Test circuits .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
9 ) 4 Package mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
10 Obsolete Product(s) - Obsolete Product(s 5 Revision history .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
13 2/14 2N7000, 2N7002 1 Electrical ratings Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter Value Unit TO-92 SOT23-3L VDS Drain-source voltage (VGS = 0) 60 V VDGR Drain-gate voltage (RGS = 20 kΩ) 60 V VGS Gate- source voltage ) ID t(s IDM (1) Drain current (continuous) at TC = 25 °C Drain current (pulsed) c PTOT Total dissipation at TC = 25 °C ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)