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FS8205A

FUXINSEMI
Part Number FS8205A
Manufacturer FUXINSEMI
Description N-Channel MOSFET
Published Apr 7, 2021
Detailed Description Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Fea...
Datasheet PDF File FS8205A PDF File

FS8205A
FS8205A

Overview
Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.
5V 20V 6A 32mΩ@2.
5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process technology High density cell design for ultra low on-resistance Application Battery protection Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.
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1 FS8205A N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature VDS 20 V VGS ±12 V ID 6 A IDM 25 A PD 1.
5 W TJ -55 ~ +150 ℃ TSTG -55 ~ +150 ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Static Characteristics Drain-source breakdown voltage Zero gate voltage drain current V(BR)DSS IDSS VGS = 0V, ID =250µA VDS =20V,VGS = 0V Gate-body leakage current Gate threshold voltage Drain-source on-resistance1) Forward transconductance1) Dynamic characteristics2) IGSS VGS(th) RDS(on) gFS VGS =±12V, VDS = 0V VDS =VGS, ID =250µA VGS =4.
5V, ID =6.
0A VGS =2.
5V, ID =5.
0A VDS =5V, ID =7A Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Coss Crss Qg Qgs Qgd VDS =8V,VGS =0V,f =1MHz VDS =10V,VGS =4.
5V,ID =4A Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time tf Source-Drain Diode characteristics VDD=10V,VGS=4V, ID =1A,,RGEN=10Ω Diode Forward voltage Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%.
2) Guaranteed by design, not subject to production testing.
VDS VGS =0V, IS=4.
0A Min.
Typ.
Max.
Unit 20 V 1 µA ±100 nA 0.
5 1.
2 V 18 25 mΩ 23 32 9 S 800 155 pF 125 11 2.
3 nC 2.
5 13 54 nS 18 11 1.
2 V www.
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1 Typical Characteristics ...


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