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FS8205A

Fortune Semiconductor
Part Number FS8205A
Manufacturer Fortune Semiconductor
Description Dual N-Channel Enhancement Mode Power MOSFET
Published Mar 20, 2016
Detailed Description REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement M...
Datasheet PDF File FS8205A PDF File

FS8205A
FS8205A

Overview
REV.
1.
6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrFoepOnecRrteTieUOsnNlEy' Fortune Semiconductor Corporation 23F, No.
29-5, Sec.
2, Zhongzheng E.
Rd.
, Danshui Dist, New Taipei City 251, Taiwan Tel.
：886-2-28094742 Fax：886-2-28094874 www.
ic-fortune.
com This manual contains new product information.
Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice.
No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product.
No rights under any patent accompany the sale of the product 1.
Features 1.
1 Low on-resistance 1.
1.
1 RDS(ON) = 28 mΩ MAX.
(VGS = 4.
5V, ID = 4A) 1.
1.
2 RDS(ON) = 37 mΩ MAX.
(VGS = 2.
5V, ID = 3A) 2.
Applications  Li-ion battery management applications 3.
Ordering Information Product Number Description FS8205A TSSOP8 package version Package Type TSSOP-8 Quantity/Reel 3,000 4.
Pin Assignment For RefPerrFoepOnecRrteTieUOsnNlEy' 5.
Absolute Maximum Ratings Symbol VDS VGS ID @TA = 25℃ ID @TA = 70℃ IDM PD @TA = 25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 6.
Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ±12 6 5 25 1 0.
008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Value Max.
125 Unit ℃/W 7.
Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Static Characteristics BVDSS Δ BVDSS/Δ Tj RDS(ON) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance2 VGS = 0V, ID = 250uA Reference to 25℃, ID=1mA VGS = 4.
5V, ID = 4A VGS = 2.
5V, ID = 3A VGS(th) IDSS IGSS Gate Threshold Voltage Drain...


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