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FS8205A

CanSheng Industry
Part Number FS8205A
Manufacturer CanSheng Industry
Description Dual N-Channel MOSFET
Published Mar 20, 2016
Detailed Description ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com FS8205A Dual N-Channel Enhancement Mode MOSFET Fea...
Datasheet PDF File FS8205A PDF File

FS8205A
FS8205A

Overview
ShenZhen CanSheng Industry Development Co.
,Ltd.
www.
szcansheng.
com FS8205A Dual N-Channel Enhancement Mode MOSFET Features z 20V/6A, RDS(ON)<25mΩ @ VGS=4.
5V RDS(ON) <34mΩ @ VGS=2.
5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Pin Description Top View D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 TSSOP-8 Applications z Portable Equipment and Battery Powered Systems.
N Channel MOSFET 1/5 FS8205A Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Symbol VDSS VGSS ID* IDM* IS* TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300μs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range PD* Maximum Power Dissipation RθJA* Thermal Resistance-Junction to Ambient Notes： *Surface Mounted on 1in2 pad area, t ≤ 10sec.
VGS=4.
5V TA=25°C TA=100°C Rating 20 ±8 6 20 1 150 -55 to 150 1.
25 0.
5 100 Unit V A A °C W °C/W Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition 8205A Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance VGS=0V, IDS=250μA VDS=16V, VGS=0V TJ=85°C VDS=VGS, IDS=250μA VGS=±8V, VDS=0V VGS=4.
5V, IDS=6A VGS=2.
5V, IDS=5.
2A 20 0.
5 Diode Characteristics VSDa Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A, VGS=0V IDS=6A, dlSD/dt=100A/μs V 1 μA 30 0.
7 1.
5 V ±100 nA 20 25 mΩ 27 34 0.
8 1.
3 V 14 ns 5 nC 2/5 FS8205A Electrical Characteristics (Cont.
)(TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, Frequency=1.
0MHz td(ON) Tr td(OFF) Tf Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time ...


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