DatasheetsPDF.com

MMBF4416

ON Semiconductor
Part Number MMBF4416
Manufacturer ON Semiconductor
Description N-Channel RF Amplifiers
Published Jan 23, 2023
Detailed Description DATA SHEET www.onsemi.com RF Amplifiers, N-Channel MMBF4416 Features • This Device is Designed for RF Amplifiers • So...
Datasheet PDF File MMBF4416 PDF File

MMBF4416
MMBF4416

Overview
DATA SHEET www.
onsemi.
com RF Amplifiers, N-Channel MMBF4416 Features • This Device is Designed for RF Amplifiers • Sourced from Process 50 • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Junction and Storage Temperature Range 30 V −30 V 10 mA −55 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) (Note 1) Symbol Parameter PD Total Device Dissipation Derate above 25_C RqJA Thermal Resistance, Junction to Ambient 1.
Device mounted on FR−4 PCB 1.
6″ × 1.
6″ × 0.
06″.
Max Unit 225 mW 1.
8 mW/_C 556 °C/W SOT−23 CASE 318−08 MARKING DIAGRAM 3 6AMG G 1: Drain 2: Source 3: Gate 1 2 6A = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MMBF4416 SOT−23 (Pb−Free/ Halide Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS V(BR)GSS Gate−Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate Source Cut−off Voltage VGS Gate Source Voltage ON CHARACTERISTICS VDS = 0, IG = 1 mA VGS = −20 V, VDS = 0 VGS = −20 V, VDS = 0, TA = 150°C VDS = 15 V, ID = 1 nA VDS = 15 V, ID = 0.
5 mA −30 − − V − − −1 nA − − −200 nA −2.
5 − −6 V −1 − −5.
5 V IDSS Zero−Gate Voltage Drain Current VGS(f) Gate−Source Forward Voltage SMALL SIGNAL CHARACTERISTICS VGS = 15 V, VGS = 0 VDS = 0, IG = 1 mA 5 − 15 m...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)