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MMBF4416A

ON Semiconductor
Part Number MMBF4416A
Manufacturer ON Semiconductor
Description N-Channel RF Amplifier
Published Jan 24, 2023
Detailed Description RF Amplifier, N-Channel MMBF4416A Features • This Device is Designed for RF Amplifiers • Sourced from Process 50 • This...
Datasheet PDF File MMBF4416A PDF File

MMBF4416A
MMBF4416A

Overview
RF Amplifier, N-Channel MMBF4416A Features • This Device is Designed for RF Amplifiers • Sourced from Process 50 • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
) (Notes 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 35 V −35 V 10 mA −55 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
These ratings are based on a maximum junction temperature of 150_C.
2.
These are steady−state limits.
onsemi should be consulted on applications involving pulsed or low−duty−cycle operations.
DATA SHEET www.
onsemi.
com SOT−23 CASE 318BM MARKING DIAGRAM 3 6BGMG G 1: Drain 2: Source 3: Gate 1 2 6BG = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MMBF4416A SOT−23 (Pb−Free/ Halide Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005 1 August, 2022 − Rev.
2 Publication Order Number: MMBF4416A/D MMBF4416A THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) (Note 3) Symbol PD Total Device Dissipation Derate above 25_C RqJA Thermal Resistance, Junction−to−Ambient 3.
Device mounted on FR−4 PCB 1.
6″ × 1.
6″ × 0.
06″.
Parameter Max Unit 225 mW 1.
8 mW/_C 556 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS V(BR)GSS Gate−Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate−Source Cut−off Voltage VGS Gate−Source Voltage ON CHARACTERISTICS VDS = ...


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