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MMBF4416A

Fairchild
Part Number MMBF4416A
Manufacturer Fairchild
Description N-Channel RF Amplifier
Published May 9, 2005
Detailed Description MMBF4416A MMBF4416A N-Channel RF Amplifier • This device is designed for RF amplifiers. • Sourced from process 50. G S...
Datasheet PDF File MMBF4416A PDF File

MMBF4416A
MMBF4416A

Overview
MMBF4416A MMBF4416A N-Channel RF Amplifier • This device is designed for RF amplifiers.
• Sourced from process 50.
G S D SOT-23 Mark: 6BG Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 35 -35 10 - 55 ~ 150 Units V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition VDS = 0, IG = 1.
0µA VGS = -20V, VDS = 0 VDS = 15V, ID = 1.
0nA VDS = 15V, ID = 500µA VGS = 15V, VGS = 0 VDS = 0, IG = 1.
0mA VDS = 15V, VGS = 0, f = 1.
0kHz VDS = 15V, VGS = 0, f = 1.
0kHz VDS = 15V, VGS = 0, f = 1.
0MHz VDS = 15V, VGS = 0, f = 1.
0MHz VDS = 15V, VGS = 0, f = 1.
0MHz VDS = 15V, VGS = 0, ID = 5mA, Rg = 1kΩ, f = 400MHz 4500 -2.
5 -1 5 Min.
-35 -100 -6.
0 -5.
5 15 1 7500 50 4.
0 0.
8 2.
0 4.
0 Typ.
Max.
Units V pA V V µA V µmhos µmhos PF PF PF Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IGSS VGS(off) VGS Gate Reverse Current Gate Source Cut-off Voltage Gate Source Voltage On Characteristics IDSS Zero-Gate Voltage Drain Current VGS(f) Gate-Source Forward Voltage Small Signal Characteristics gfs Forward Transfer Conductance * gos Ciss Crss Output Conductance * Input Capacitance Reverse Transfer Capacitance Output Capacitance Noise Figure Coss NF dB * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max.
225 1.
8 556 Units mW mW/°C °C/W * Device mounted on FR-4 PCB 1.
6” × 1.
6” × 0.
06”.
©2002 F...


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