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2N7002H

nexperia
Part Number 2N7002H
Manufacturer nexperia
Description 60V N-Channel MOSFET
Published May 25, 2023
Detailed Description 2N7002H 60 V, N-channel Trench MOSFET 1 December 2021 Product data sheet 1. General description N-channel enhancement ...
Datasheet PDF File 2N7002H PDF File

2N7002H
2N7002H

Overview
2N7002H 60 V, N-channel Trench MOSFET 1 December 2021 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • AEC-Q101 qualified 3.
Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 360 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 500 mA; Tj = 25 °C resistance - 1 1.
6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia 2N7002H 60 V, N-channel Trench MOSFET 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 1 2 SOT23 Graphic symbol D G mbb076 S 6.
Ordering information Table 3.
Ordering information Type number Package Name 2N7002H SOT23 Description plastic, surface-mounted package; 3 terminals; 1.
9 mm pitch; 2.
9 mm x 1.
3 mm x 1 mm body Version SOT23 7.
Marking Table 4.
Marking codes Type number 2N7002H [1] % = placeholder for manufacturing site code Marking code[1] M9% 2N7002H Product data sheet All information provided in this document is subject to legal disclaimers.
1 December 2021 © Nexperia B.
V.
2021.
All rights reserved 2 / 15 Nexperia 2N7002H 60 V, N-channel Trench MOSFET 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C [1] VG...


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