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SPP7411

SYNC POWER
Part Number SPP7411
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published Sep 28, 2023
Detailed Description SPP7411 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7411 is the P -Channel logic enhancement mode power field ...
Datasheet PDF File SPP7411 PDF File

SPP7411
SPP7411

Overview
SPP7411 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7411 is the P -Channel logic enhancement mode power field effect transistors are produced using super high cell density , DMOS trench technology.
The SPP7411 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  Powered System  DC/DC Converter  Load Switch  Power Tool  Motor Control FEATURES  -100V/-3A,RDS(ON)=200mΩ@VGS=-10V  -100V/-1A,RDS(ON)=220mΩ@VGS=-4.
5V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOP-8 package design PIN CONFIGURATION(SOP–8) 2022/09/02 Ver 1 PART MARKING Page 1 SPP7411 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPP7411S8RGB SOP-8 ※ SPP7411S8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPP7411 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM PD TJ TSTG RθJA Typical -100 ±20 -3.
0 -2.
0 -20 2.
8 -55/150 -55/150 62.
5 Unit V V A A W ℃ ℃ ℃/W 2022/09/02 Ver 1 Page 2 SPP7411 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Continuous-Source Current Drain-Source On-Resistance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacita...


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