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SPP7407

SYNC POWER
Part Number SPP7407
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published Mar 17, 2010
Detailed Description SPP7407 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7407 is the P-Channel logic enhancement mode power field e...
Datasheet PDF File SPP7407 PDF File

SPP7407
SPP7407

Overview
SPP7407 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7407 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -20V/-3.
4A,RDS(ON)=100mΩ@VGS=-4.
5V  -20V/-2.
4A,RDS(ON)=125mΩ@VGS=-2.
5V  -20V/-1.
7A,RDS(ON)=180mΩ@VGS=-1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-323 ( SC–70 ) package design PIN CONFIGURATION ( SOT-323 ; SC-70 ) PART MARKING 2020/01/30 Ver.
5 Page 1 SPP7407 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP7407S32RGB SOT-323 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP7407S32RGB : Tape Reel ; Pb – Free ; Halogen -Free Part Marking 07 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -20 ±12 -2.
3 -1.
7 -6 -1.
4 0.
33 0.
21 -55/150 -55/150 105 Unit V V A A A W ℃ ℃ ℃/W 2020/01/30 Ver.
5 Page 2 SPP7407 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Pa...


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