DatasheetsPDF.com

SPP7401

SYNC POWER
Part Number SPP7401
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published Mar 17, 2010
Detailed Description SPP7401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7401 is the P-Channel logic enhancement mode power field e...
Datasheet PDF File SPP7401 PDF File

SPP7401
SPP7401


Overview
SPP7401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -30V/-2.
8A,RDS(ON)=115mΩ@VGS=-10V  -30V/-2.
5A,RDS(ON)=135mΩ@VGS=-4.
5V  -30V/-1.
5A,RDS(ON)=170mΩ@VGS=-2.
5V  -30V/-1.
0A,RDS(ON)=240mΩ@VGS=-1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-323 ( SC–70 ) package design PIN CONFIGURATION ( SOT-323 ; SC-70 ) PART MARKING 2020/1/31 Ver.
5 Page 1 SPP7401 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP7401S32RGB SOT-323 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP7401S32RGB : Tape Reel ; Pb – Free ; Halogen -Free Part Marking 01 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±12 -2.
8 -2.
1 -8 -1.
4 0.
33 0.
21 -55/150 -55/150 105 Unit V V A A A W ℃ ℃ ℃/W 2020/1/31 Ver.
5 Page 2 SPP7401 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)