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SPP7465

SYNC POWER
Part Number SPP7465
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published Jul 24, 2014
Detailed Description SPP7465 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7465 is the P-Channel logic enhancement mode power field e...
Datasheet PDF File SPP7465 PDF File

SPP7465
SPP7465


Overview
SPP7465 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7465 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -60V/-8A,RDS(ON)=90mΩ@VGS=-10V  -60V/-6A,RDS(ON)=100mΩ@VGS=-4.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) PART MARKING 2022/7/28 Ver.
3 page 1 SPP7465 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPP7465S8RGB SOP-8 ※ SPP7465S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Part Marking SPP7465 Typical -60 ±20 -8 -6 -30 -2.
3 2.
8 1.
8 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W 2022/7/28 Ver.
3 page 2 SPP7465 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source ...


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