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UTT80N07

UTC
Part Number UTT80N07
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Dec 2, 2023
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTT80N07 70V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N07 is a N-channel Po...
Datasheet PDF File UTT80N07 PDF File

UTT80N07
UTT80N07

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTT80N07 70V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N07 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
The UTC UTT80N07 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
 FEATURES * RDS(ON) ≤ 11 mΩ @ VGS=10V, ID=40A * Trench FET Power MOSFETS Technology  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTT80N07L-TA3-T UTT80N07G-TA3-T TO-220 UTT80N07L-TN3-R UTT80N07G-TN3-R TO-252 UTT80N07L-P5060-R UTT80N07G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 GDS - - - - GDS - - - - S S SGDDDD Packing Tube Tape Reel Tape Reel www.
unisonic.
com.
tw Copyright © 2023 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R209-281.
C UTT80N07  MARKING TO-220 / TO-252 Power MOSFET PDFN5×6 UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R209-281.
C UTT80N07 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 70 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 80 A Pulsed Drain Current IDM 160 A Avalanche Energy, Single Pulse EAS 180 mJ TO-220 180 W Power Dissipation TO-252 PD PDFN5×6 64 W 42 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L=0.
1mH, IAS=60A, VDD=25V, RG=20Ω, Starting TJ =25°C.
 THERMAL DATA PARAMETER SYMBOL RATINGS TO-220 62.
5 Junction to Ambient TO-252 θJA PDFN5×6 110(Note) 65 (Note) ...


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