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UTT80N10

Unisonic Technologies
Part Number UTT80N10
Manufacturer Unisonic Technologies
Description N-CHANNEL MOSFET
Published Nov 9, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTT80N10 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N10 is an N-channel ...
Datasheet PDF File UTT80N10 PDF File

UTT80N10
UTT80N10

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTT80N10 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N10 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.
The UTC UTT80N10 is suitable for DC-DC converters, Off-Line UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V and 24V Systems, etc.
 FEATURES * RDS(ON)<18mΩ @ VGS=10V, ID=80A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 49nC)  SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT80N10L-TA3-T UTT80N10G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube  MARKING www.
unisonic.
com.
tw Copyright © 2016 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R502-712.
B UTT80N10 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Single Pulsed Avalanche Energy (Note 3) VGSS ID IDM EAS ±20 V 80 A 320 A 416 mJ Power Dissipation Junction Temperature PD 211 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
3.
L = 0.
13mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 0.
59  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS...


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