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UTT80N06

Unisonic Technologies
Part Number UTT80N06
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Mar 5, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary 60V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N06 i...
Datasheet PDF File UTT80N06 PDF File

UTT80N06
UTT80N06

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTT80N06 Preliminary 60V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed.
It can also withstand high energy pluse in the avalanche and commutation mode.
The UTC UTT80N06 is suitable for active power factor correction, high efficient switched mode power supplies and electronic lamp ballast based on half bridge topology, etc.
 FEATURES * RDS(ON)< 10mΩ @ VGS=10V * High switching speed * Improved dv/dt capability * Low Crss(typical 145pF) * Low Gate Charge(typical 57nC)  SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 1 Pin Assignment 234567 8 Packing UTT80N06L-TA3-T UTT80N06G-TA3-T TO-220 G D S - - - - - Tube UTT80N06L-TQ2-T UTT80N06G-TQ2-T TO-263 G D S - - - - - Tube UTT80N06L-TQ2-R UTT80N06G-TQ2-R TO-263 G D S - - - - - Tape Reel UTT80N06L-S08-R UTT80N06G-S08-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source www.
unisonic.
com.
tw Copyright © 2010 Unisonic Technologies Co.
, Ltd 1 of 7 VER.
a UTT80N06  MARKING INFORMATION PACKAGE TO-220 TO-263 Preliminary MARKING Power MOSFET SOP-8 UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R502-706.
c UTT80N06 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) (Note 2) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous TC=25°C TC=100°C ID 80 A 65 A Pulsed (Note 3) IDM 320 A Avalanche Current (Note 3) IAR 80 A Avalanche Energy Single Pulsed (Note 4) Repetitive (Note3) EAS EAR 480 mJ 17.
6 mJ Power Dissipation TO-220/TO-263 SOP-8 PD 147 5.
2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1.
Absolute maximum rati...


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