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UTT80N75

Unisonic Technologies
Part Number UTT80N75
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Mar 5, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary 80A, 75V N-CHANNEL POWER MOSFET Power MOSFET „ DESCRIPTION The ...
Datasheet PDF File UTT80N75 PDF File

UTT80N75
UTT80N75

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTT80N75 Preliminary 80A, 75V N-CHANNEL POWER MOSFET Power MOSFET „ DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed.
„ FEATURES * 80A, 75V, RDS(ON)=10mΩ @VGS=10V, ID=20A * Low gate charge ( typical 117nC) * High switching speed 1 TO-220 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTT80N75L-TA3-T UTT80N75G-TA3-T TO-220 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 23 G DS Packing Tube www.
unisonic.
com.
tw Copyright © 2013 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-881.
a UTT80N75 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 75 V VGSS ±25 V Drain Current Avalanche Energy Continuous Pulsed Single Pulsed ID IDM EAS 80 A 320 A 330 mJ Power Dissipation PD 167 W Junction Temperature Storage Temperature Range TJ TSTG -50~+150 -50~+150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC „ ELECTRICAL CHARACTERISTICS RATINGS 62.
5 0.
75 UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=75V, VGS=0V VGS=+25V, VDS=0V VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) RDS(ON) VDS=VGS, ID=250µA VGS=10V, ID=20A DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS=25V, f=1.
0MHz SWITCHING PARAMETERS Total Gate ...


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