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FDN8601

ON Semiconductor
Part Number FDN8601
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET – N-Channel, POWERTRENCH) 100 V, 2.7 A, 109 mW FDN8601 General Description This N−Channel MOSFET is produced usi...
Datasheet PDF File FDN8601 PDF File

FDN8601
FDN8601

Overview
MOSFET – N-Channel, POWERTRENCH) 100 V, 2.
7 A, 109 mW FDN8601 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Features • Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.
5 A • Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.
2 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • Primary DC−DC Switch • Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous (Note 1a) Pulsed 100 V ±20 V 2.
7 A 12 EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation (Note 1a) (Note 1b) 13 mJ 1.
5 W 0.
6 TJ, TSTG Operating and Storage Junction T...


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