DatasheetsPDF.com

FDN8601

TY Semiconductor
Part Number FDN8601
Manufacturer TY Semiconductor
Description N-Channel MOSFET
Published Aug 5, 2014
Detailed Description SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A ...
Datasheet PDF File FDN8601 PDF File

FDN8601
FDN8601

Overview
SMD Type Product specification FDN8601 100 V, 2.
7 A, 109 m: Features „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.
5 A „ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.
2 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications „ Primary DC-DC Switch „ Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 3) (Note 1a) (Note 1b) (Note 1a) Ratings 100 ±20 2.
7 12 13 1.
5 0.
6 -55 to +150 Units V V A mJ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)