2N708

2N70 : Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * RDS(ON) = 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 8.1nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Pin Assignment 1 2 3 G .

2N70-CA : The UTC 2N70-CA is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) 5.2Ω @ VGS = 10V , ID = 1.0 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N70L-TN3-R 2N70G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-252 P.

2N70-CB : The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) 6.0Ω @ VGS = 10V , ID = 1.0 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N70L-AA3-R 2N70G-AA3-R 2N70L-TA3-T 2N70G-TA3-T 2N70L-TF1-T 2N70G-TF1-T 2N70L-TF1-T 2N7.

2N70-HC : The UTC 2N70-HC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 4.3 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 1 TO-220F1 1 TO-251 1 TO-220F2 1 TO-252  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N70L-TF1-T 2N70G-TF1-T 2N70L-TF2-T 2N70G-TF2-T 2N70L-TM3-T 2N70G-TM3-T 2N70L-TN3-R 2N70G-TN3-R Note: Pin Assignm.

2N70-M : The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 17.2nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 1 1 Power MOSFET TO-220F TO-251  ORDERING INFORMATION Ordering Number Lead Free Halo.

2N700 : 2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage 2N700 2N700A Emitter-Base Voltage Collector DC Current Junction Temperature Storage Temperature Total Device Dissipation at 250 C Ambient Derate above 250 C Symbol VCB VCEO VEB Ie TJ Tstg PD Value 25 20 25 0.2 50 100 -65 to +100 75 1.0 Unit Vdc Vdc Vdc mAdc °c °c mW mW;oC POWER GAIN CURRENT GAIN, & NOISE FIGURE versus FREQUENCY 40 30 f--powt GAIN ~ !!! 20 :.l co 10 o 2 h•• Vel = -6Ydc "'"I, =2 mAde ""-I "NOISE FIGURE I''\. '"-"~10 20 50 100 200 "t. .

2N7000 : The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.

2N7000 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 – 55 to +150 mW mW/°C °C Unit Vdc Vdc Vdc Vpk mAdc CASE 29–04, STYLE 22 TO–92 (TO–226AA) 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient.

2N7000 : N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. PINNING - TO-92 VARIANT handbook, halfpage 2N7000 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value ID = 500 mA VGS = 10 V ID = 1 mA VGS = VDS CONDITIONS MAX. 60 280 5 3 UNIT V mA Ω V PIN CONFIGURATION d PIN 1 2 3 drain gate DESCRIPTION 1 2 3 g source MAM146 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES.

2N7000 : 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V VGS(th) (V) 0.8 to 3 1 to 2.5 0.8 to 2.5 0.8 to 2.5 0.8 to 3 ID (A) 0.2 0.115 0.225 0.225 0.5 FEATURES D D D D D Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Driver.

2N7000 : 2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Saturation Current Capability G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS  1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, Continuous . . . .V.G. S. . . . . . . . . . . . . . . . . . . . . . . . .

2N7000 : Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 200 IDM Drain Current-Single Pulsed 1.3 PD Total Dissipation @TC=25℃ 350 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V mA A mW ℃ ℃ ·THERMAL CHARACTERISTIC.

2N7000 : bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresistance, rugged avalanche characteristics and cless critical alignment steps therefore a uremarkable manufacturing reproducibility. 3 2 1 SOT23-3L TO-92 Figure 1. Internal schematic diagram Obsolete Prod SOT23-3L TO-92 Table 1. Device summary Order codes 2N7000 2N7002 Marking 2N7000G ST2N Package TO-92 SOT23-3L Packaging Bulk Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents Contents 2N7000, 2N7002 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . ..

2N7000 : These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • High Density Cell Design for Low RDS(on) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • ESD Protection Level: HBM 100 V, CDM 2 kV • This Device is Pb−Free and Halogen Free DATA SHEET w.

2N7000 : The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications „ FEATURES *High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability „ SYMBOL 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N7000L-T92-B 2N7000G-T92-B TO-92 2N7000L-T92-K .

2N7000 : These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. D 1 TO-92 1. Source 2. Gate 3. Drain S G SOT-23 (TO-236AB) 2N7002/NDS7002A G D S Ordering I.

2N7000 : 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1 MΩ) Gate-source Voltage Drain Current Continuous Non-repetitive ( tp ≤ 50 μs) Continuous Pulsed Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD Tj Tstg Value 60 60 ± 20 ± 40 200 500 350 150 - 55 to + 150 Unit V V V V mA mA mW OC OC SEMTECH ELECTRONICS LTD. ® Dated : 16/08/2016 Rev:01 2N7000 Characteristics at Ta = 25 OC Parameter Drain-Source Breakdown Voltage at VGS = 0, ID = 10 μA Zero Gate Voltage Drain .