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BAS125

Siemens Semiconductor Group
Part Number BAS125
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diodes
Published Mar 26, 2005
Detailed Description Silicon Schottky Diodes q q q BAS 125 … For low-loss, fast-recovery, meter protection, bias isolation and clamping app...
Datasheet PDF File BAS125 PDF File

BAS125
BAS125

Overview
Silicon Schottky Diodes q q q BAS 125 … For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 Ordering Code Pin Configuration (tape and reel) Q62702-D1316 Q62702-D1321 Package1) SOT-23 BAS 125-05 15 Q62702-D1322 BAS 125-06 16 Q62702-D1323 1) For detailed information see chapter Package Outlines.
Semiconductor Group 1 02.
96 BAS 125 … q q q For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125-07 Marking 17 Ordering Code Pin Configuration (tape and reel) Q62702-D1327 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation, TS ≤ 25 ˚C 3) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF IFSM Ptot Tj Tstg Values 25 100 500 250 150 – 55 … + 150 Unit V mA mW ˚C 725 565 K/W 1) 2) 3) For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.
7 mm × 0.
7 mm.
450 mW per package.
Semiconductor Group 2 BAS 125 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified.
Parameter Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA Diode capacitance VR = 0, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Symbol min.
IR – – VF – – – CT RF – – 385 530 800 – 15 410 – 900 1.
1 – pF Ω – – 1 10 mV Values typ.
max.
µA Unit Semiconductor Group 3 BAS 125 … Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina BAS 125-04, -05, -06, -07 Forward current IF = f (TS; TA*) *Pac...


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