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2SD968A

Panasonic Semiconductor
Part Number 2SD968A
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planer type Transistor
Published Mar 30, 2005
Detailed Description Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2S...
Datasheet PDF File 2SD968A PDF File

2SD968A
2SD968A

Overview
Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm s Features q q 2.
6±0.
1 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 0.
4max.
45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC* Tj Tstg Symbol (Ta=25˚C) 1.
0–0.
2 +0.
1 Ratings –100 –120 –100 –120 –5 –1 –0.
5 1 150 –55 ~ +150 Unit V 0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 3 2 1 4.
0–0.
20 0.
4±0.
04 emitter voltage 2SB789A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V marking V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : D(2SB789) E(2SB789A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.
7mm for the collector portion s Electrical Characteristics Parameter Collector to emitter voltage 2SB789 2SB789A (Ta=25˚C) Symbol VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –100 –120 –5 90 50 – 0.
2 – 0.
85 120 30 – 0.
6 –1.
2 V V MHz pF 220 typ max Unit V V Collector to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Rank hFE1 Q 90 ~ 155 2SB789 2SB789A DQ EQ R 130 ~ 220 DR ER Marking Symbol 2.
5±0.
1 +0.
25 High collector to emitter voltage VCEO.
Large collector power dissipation PC.
1 Transistor PC — Ta 1.
4 2SB789, 2SB789A IC — VCE –1.
2 Ta=25˚C –1.
0 –18mA –16mA –14mA IB=–20mA –12mA –10mA – 0.
8mA – 0.
6mA – 0.
4mA –1.
0 –1.
2 VCE=–10V Ta=25˚C IC — I B Collector power dissipation PC (W) 1.
2 Printed circut board: Copper foil area of 1cm2 or mo...


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