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2SK2339

Panasonic Semiconductor
Part Number 2SK2339
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel Power F-MOS
Published Mar 30, 2005
Detailed Description Power F-MOS FETs 2SK2339 2SK2339 Silicon N-Channel Power F-MOS s Features q Avalanche q Low q No Unit : mm 8.5±0.2 6.0...
Datasheet PDF File 2SK2339 PDF File

2SK2339
2SK2339

Overview
Power F-MOS FETs 2SK2339 2SK2339 Silicon N-Channel Power F-MOS s Features q Avalanche q Low q No Unit : mm 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 1.
0±0.
1 energy capability guaranteed ON-resistance 10.
0±0.
3 secondary breakdown drive 1.
5±0.
1 q Low-voltage s Applications 10.
5min.
1.
5max.
2.
0 1.
1max.
q Non-contact q Solenoid q Motor relay drive 0.
8±0.
1 0.
5max.
drive equipment mode regulator 2.
54±0.
3 5.
08±0.
5 1 2 3 q Control q Switching s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 80±10 ±15 ±10 ±20 62.
5 30 1.
3 150 –55 to +150 Unit V V A A mJ W ˚C ˚C S G 1 : Gate 2 : Collector 3 : Emitter N Type Package s Equivalent Circuit D Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature * L= 5mH, IL= 5A, 1 pulse s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leaka...


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