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2SK2368

NEC
Part Number 2SK2368
Manufacturer NEC
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ...
Datasheet PDF File 2SK2368 PDF File

2SK2368
2SK2368

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeter) 1.
0 15.
7 MAX.
4 3.
2±0.
2 4.
7 MAX.
1.
5 FEATURES 2SK2368: RDS (on) = 0.
6 Ω (VGS = 10 V, ID = 8.
0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.
0 150 15 161 V V A A W W ˚C A mJ 19 MIN.
3.
0±0.
2 • Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings 1 2 3 2.
2±0.
2 5.
45 1.
0±0.
2 5.
45 4.
5±0.
2 2SK2367: RDS (on) = 0.
5 Ω (VGS = 10 V, ID ...


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