DatasheetsPDF.com

2SK2374 Datasheet PDF


Part Number 2SK2374
Manufacturer Panasonic Semiconductor
Title N-Channel MOSFET
Description Power F-MOS FETs 2SK2374 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resi...
Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5˚...

File Size 44.47KB
Datasheet 2SK2374 PDF File








Similar Ai Datasheet

2SK2370 : The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) φ 3.0 ± 0.2 1.0 15.7 MAX 4 4.7 MAX. 1.5 FEATURES • Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2 • Low Ciss Ciss = 2400 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage(2SAK2369/2370) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VGSS ID(D.

2SK2371 : The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings 1 3.0 ± 0.2 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TC = 25 °C) Total Power Dissipation (Ta = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 .

2SK2372 : The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings 1 3.0 ± 0.2 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TC = 25 °C) Total Power Dissipation (Ta = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 .

2SK2373 : 2SK2373 Silicon N-Channel MOS FET ADE-208-268 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. Marking is “ZE–”. Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 0.2 0.4 0.2 150 .

2SK2375 : Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 2.0 1.2 5˚ 18.6±0.5 5˚ 5˚ 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 ±30 ±8 ±16 60 100 3 150 −55 to +150 Unit V V 5.45±0.3.

2SK2376 : www.DataSheet.co.kr 2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2376 Chopper Regulator, DC−DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 13 mΩ (typ.) : |Yfs| = 40 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 100 701 45 10 150 −55 to 150 Uni.

2SK2377 : Power F-MOS FETs 2SK2377 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator s Absolute Maximum Ratings (Tc = 25˚C) Parameter Symbol Rating Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability VDSS VGSS ID IDP EAS * 170 ±20 ±20 ±40 200 Allowable power dissipation TC= 25˚C Ta= 25˚C PD 50 2 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 * L=1mH, IL= 20A, 1 pulse Unit V V A A mJ.

2SK2378 : Ordering number : ENN5412B 2SK2378 N-channel Silicon MOSFET 2SK2378 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions unit : mm 2063A [2SK2378] 10.0 3.2 4.5 2.8 Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitaing mounting. 3.5 7.2 16.0 18.1 14.0 1.6 1.2 0.75 5.6 2.4 0.7 2.55 1 2 3 2.55 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 200 ± 20 13 Unit V V A A W W °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP .

2SK2379 : Ordering number : ENN5374A 2SK2379 N-Channel Silicon MOSFET 2SK2379 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions unit : mm 2063A [2SK2379] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micalless package facilitaing mounting. 4.5 2.8 18.1 16.0 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 5.6 2.4 0.7 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 200 ±20 20 Unit V V A A W W °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID I.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)