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FDB6644

Fairchild Semiconductor
Part Number FDB6644
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP6644/FDB6644 June 2001 FDP6644/FDB6644 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET ...
Datasheet PDF File FDB6644 PDF File

FDB6644
FDB6644

Overview
FDP6644/FDB6644 June 2001 FDP6644/FDB6644 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 50 A, 30 V.
RDS(ON) = 8.
5 mΩ @ VGS = 10 V RDS(ON) = 10.
5 mΩ @ VGS = 4.
5 V • Low gate charge (27 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ± 16 (Note 1) (Note 1) Units V V A A W W/°C °C 50 150 83 0.
55 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.
8 62.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6644 FDP6644 Device FDB6644 FDP6644 Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 ©2001 Fairchild Semiconductor Corporation FDP6644 Rev C(W) FDP6644/FDB6644 Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VDD = 15 V, ID = 25 A Min Typ Max Units 240...


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