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FDD6630A

Fairchild Semiconductor
Part Number FDD6630A
Manufacturer Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD6630A July 1999 ADVANCE INFORMATION FDD6630A N-Channel PowerTrenchTM MOSFET General Description This N-Channel Logi...
Datasheet PDF File FDD6630A PDF File

FDD6630A
FDD6630A

Overview
FDD6630A July 1999 ADVANCE INFORMATION FDD6630A N-Channel PowerTrenchTM MOSFET General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • • • • 21 A, 30 V.
RDS(ON) = 0.
035 Ω @ VGS = 10 V RDS(ON) = 0.
050 Ω @ VGS = 4.
5 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
Applications • • DC/DC converter Motor drives D D G G S TO-252 Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) T C =25 oC unless otherwise noted S Parameter Ratings 30 ± 20 21 7.
6 100 28 3.
2 1.
3 -55 to +150 Units V V A Maximum Power Dissipation @ T C = 25 o C T A = 25 o C T A = 25 o C W T J, T stg Operating and Storage Junction Temperature Range °C Thermal Characteristics R θJC R θJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1a) (Note 1b) 4.
5 40 96 ° C/W ° C/W ° C/W Package Marking and Ordering Information Device Marking FDD6630A 1999 Fairchild Semiconductor Corporation Device FDD6630A Reel Size 13’’ Tape W idth 16m m Quantity 2500 FDD6630A Rev.
A FDD6630A Electrical Characteristics Symbol Parameter TC=25oC unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 1 100 -100 V µA nA nA ON CHARACTERISTICS VGS(TH) RDS(ON) Static Drain-Source On-Resistance Gate Threshold Voltage VDS = VGS, ID = 250 µA VGS = 10 V, ID = 7.
6 A VGS = 4.
5 V, ID = ...


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