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FDD6632

Fairchild Semiconductor
Part Number FDD6632
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDD6632 June 2002 FDD6632 N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 90mΩ General Description This d...
Datasheet PDF File FDD6632 PDF File

FDD6632
FDD6632


Overview
FDD6632 June 2002 FDD6632 N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 90mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Formerly developmental type 83317 Features • Fast switching • rDS(ON) = 0.
058Ω (Typ), VGS = 10V, ID = 9A • rDS(ON) = 0.
090Ω (Typ), VGS = 4.
5V, ID = 6A • Qg(TOT) (Typ) = 2.
6nC, VGS = 5V • Qgd (Typ) = 0.
8nC • CISS (Typ) = 255pF Applications • DC/DC converters D D G S G D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.
5V) Continuous (TC = 25oC, VGS = 10V, Rθ JA = 52oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 9 6 4 Figure 4 15 0.
1 -55 to 175 A A A A W W/oC o Ratings 30 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 10 100 52 o o C/W C/W oC/W Package Marking and Ordering Information Device Marking FDD6632 Device FDD6632 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units ©2002 Fairchild Semiconductor Corporation FDD6632 Rev.
B FDD6632 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V VGS = ±20V TC = 150oC 30 1 250 ±100 V µA nA On Characteristics VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resist...


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