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FDD6635

Fairchild Semiconductor
Part Number FDD6635
Manufacturer Fairchild Semiconductor
Description 35V N-CHANNEL MOSFET
Published Jun 4, 2007
Detailed Description FDD6635 35V N-Channel PowerTrench® MOSFET March 2015 FDD6635 35V N-Channel PowerTrench® MOSFET General Description Th...
Datasheet PDF File FDD6635 PDF File

FDD6635
FDD6635

Overview
FDD6635 35V N-Channel PowerTrench® MOSFET March 2015 FDD6635 35V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.
Applications • Inverter • Power Supplies Features • 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.
5 V • Fast Switching • RoHS compliant D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VDS(Avalanche) VGSS ID Parameter Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Ratings 35 40 ±20 59 15 100 EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 5) Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) Operating and Storage Junction Temperature Range 113 55 3.
8 1.
6 –55 to +150 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.
7 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width FDD6635 FDD6635 D-PAK (TO-252) 13’’ 16mm Units V V V A mJ W °C °C/W °C/W °C/W Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDD6635 Rev.
1.
2 www.
fairchildsemi.
com FDD6635 35V N-Channel PowerTrench® MOSFET Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics(Note 2) BVDSS ΔBVDSS ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage VGS = 0 V, ID = 250 μA ID = 250 μA, Referenced to 25°C VDS = 28 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 3...


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