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FDP603AL

Fairchild Semiconductor
Part Number FDP603AL
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These...
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FDP603AL
FDP603AL

Overview
April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 33 A, 30 V.
RDS(ON) = 0.
022 Ω @ VGS=10 V RDS(ON) = 0.
036 Ω @ VGS=4.
5 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
_________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage T C = 25°C unless otherwise noted FDP603AL 30 ±20 33 (Note 1) FDB603AL Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C 100 50 0.
33 -65 to 175 275 W W/°C °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 62.
5 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDP603AL Rev.
D Electrical Characteristics Symbol Parameter T C = 25°C unless otherwise noted) Conditions Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 12 A 100 12 mJ A OFF CHARACTERISTICS Drain-Source Break...


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