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FQI13N06

Fairchild Semiconductor
Part Number FQI13N06
Manufacturer Fairchild Semiconductor
Description 60V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB13N06 / FQI13N06 May 2001 QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description These N-Channel enhance...
Datasheet PDF File FQI13N06 PDF File

FQI13N06
FQI13N06

Overview
FQB13N06 / FQI13N06 May 2001 QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
D TM Features • • • • • • • 13A, 60V, RDS(on) = 0.
135Ω @VGS = 10 V Low gate charge ( typical 5.
8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°...


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