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FQPF6N60

Fairchild Semiconductor
Part Number FQPF6N60
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF6N60 April 2000 QFET FQPF6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power fie...
Datasheet PDF File FQPF6N60 PDF File

FQPF6N60
FQPF6N60

Overview
FQPF6N60 April 2000 QFET FQPF6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 3.
6A, 600V, RDS(on) = 1.
5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF6N60 600 3.
6 2.
3...


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