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FQPF6N70

Fairchild Semiconductor
Part Number FQPF6N70
Manufacturer Fairchild Semiconductor
Description 700V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF6N70 December 2000 QFET FQPF6N70 700V N-Channel MOSFET General Description These N-Channel enhancement mode power ...
Datasheet PDF File FQPF6N70 PDF File

FQPF6N70
FQPF6N70

Overview
FQPF6N70 December 2000 QFET FQPF6N70 700V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 3.
5A, 700V, RDS(on) = 1.
5 Ω @ VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF6N70 700 3.
5 2.
2 1...


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